15,259 mosfet 600v products are offered for sale by suppliers on Alibaba.com, of which transistors accounts for 27%, integrated circuits accounts for 25%, and switches accounts for 1%. A wide variety of mosfet 600v options are available to you, such as other.

IXYS IXFN64N60P | Module; single transistor; 600V; 50A; SOT227B; Ugs: ±40V; screw - This product is available in Transfer Multisort Elektronik. Check out our wide range of products.

element14 offers special pricing, same day dispatch, fast delivery, 600V 0.03ohm 10V 3.9V 560W 150°C CoolMOS Series Modules are available in the range of 35-900A and 600V / 1200V / 1700V. The IGBT/MOSFET Module also features a low inductance package design, high isolation voltage and a wide variety of customer specific solutions and housing types. 600V. Full SiC-IPM. Hybrid SiC-IPM.

For a quick estimate of the switching time, the Multi Discrete Module N-Channel MOSFET and Low VF Schottky Diode CMLM0205 2 Pages. Add to MyDirectIndustry favorites {{requestButtons}} CHD8-06 8.0A, 600V, HyperFast Power Rectifier in DPAK package. 2 Pages. CMR1H-04MFL 1.0A, 400V HyperFast Recovery Rectifier in the SMAFL package. The first product out of this scalable platform, a 3-Phase 1200V/450A SiC MOSFET IPM, features low conduction losses, with 3.25mOhms On resistance, and low switching losses, with respectively 8.3mJ turn-on and 11.2mJ turn-off energies at 600V/300A. It reduces losses by at least a factor 3 with respect to state-of-the-art IGBT power modules. CXT-PLA3SA12450A is a 3-phase 1200V/450A Silicon Carbide (SiC) MOSFET Intelligent Power Module integrating the power switches and a gate driver based on the CISSOID HADES2 chipset.

600V IGBT Modules; 1200V IGBT Modules; 1700V IGBT Modules; MOSFETs. MOSFET Discretes; MOSFET Modules; Thyristors（SCRs) Thyristor Discretes（SCRs) Thyristor-Thyristor Modules; Thyristor-Diode Modules; Anti-Paralled Thyristor-Thyristor Modules (Solid State AC Switches) Single Phase Half Controlled Bridge Modules with Free Wheeling Diode

by in-built temperature protection 1-MODULE, DIN rail mounting Supply A1-A2 80A 100 mA -+3%+8d Voltsticka: 100V AC till 600V AC 50/60 Hz • Automatisk Number of Wire Entries: 6. Part Status: Obsolete. Pitch: 0.546"" (13.86mm). Terminal Block Type: Barrier Block.

Köp IGBT Module 600V 730W. Köp våra senaste Transistorer - IGBT-arrayer och moduler-erbjudanden. Möjlighet till leverans nästa dag.

www.ixys.com. March 2014. 75V-600V LinearL2™ Power MOSFETs with Extended FBSOAs. P. Losee et al., “High Performance 1.2kV-2.5kV 4H-SiC MOSFETs typical SCWT test results for the Gen-3 GE MOSFETs (GE1209003B1):.

View Training Module MOSFET N-CH 600V 15A TO220 FULLP Buy IXYS IXGN320N60A3 Single IGBT Module, 320 A 600 V, 4-Pin The IGBT combines the simple gate-drive characteristics of the MOSFETs with the TRANSISTOR MOSFET STW18NK80Z N-CHANNEL 800V 18A TO-247 VAR · 0,0 TRIAC MODULE MTCHD100-60 100A 600V ZNL TRIAC MODULE Order IPW60R180C7XKSA1 Infineon Technologies from infineon.component-se.com. Transistorer - FET, MOSFETs - Single - MOSFET N-CH 600V 13A Del#:DSEP2X91-06A; tillverkare:IXYS; Beskrivning:DIODE MODULE 600V Del#:IXTP1N120P; tillverkare:IXYS; Beskrivning:MOSFET N-CH 1200V 1A TO-220 N-channel, 30A, 130mΩ @14.5A,10V, 600V, -, 2 - 4V @1mA, TO-220F-3, ROHM 290, 68.49, PB-Free, RoHS, Silicon N-Channel MOSFET 600V/24A,. MDA950-18N1W, DIODE MODULE 1.8KV 950A. MIXA40WB1200TED, IGBT MODULE 1200V 40A IXFL82N60P, MOSFET N-CH 600V 55A ISOPLUS 264.
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View Training Module MOSFET N-CH 600V 15A TO220 FULLP TRANSISTOR MOSFET STW18NK80Z N-CHANNEL 800V 18A TO-247 VAR · 0,0 TRIAC MODULE MTCHD100-60 100A 600V ZNL TRIAC MODULE STGIPN3H60A · STMicroelectronics, IGBT IPM MODULE 3A 600V NDIP-26L Technologies Group, SIC MOSFET 6-PACK MODULE B2_EASY, $556.325/pcs Order APT38N60SC6 Microsemi Corporation from component-se.com. Transistorer - FET, MOSFETs - Single - MOSFET N-CH 600V 38A D3PAK. Order IPW60R120P7XKSA1 Infineon Technologies from infineon.component-se.com. Transistorer - FET, MOSFETs - Single - MOSFET N-CH 600V 26A ST's MDmesh K5 series, currently the only very high voltage super-junction N-channel MOSFETs in the market, ensures the best efficiency and safety margin for Köp IGBT Module 600V 730W.

Driftstemperatur: -40°C ~ 75°C. Antal utgångar: 1.
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MOSFET-600V 600V MOSFET. A FREDFET is a MOSFET with a faster recovery intrinsic body diode. Turn Off Snubber Design for High Frequency Modules

These benefits make these products ideal for applications in Power Supplies for DC power equipment, Rectifier for induction heating, Welding equipment, High temperature environments and more. VCES=600V-B3 Part Number Voltage(V) Current(A) Technology Package Outline Comments li nks Standard K Series GK10PI60B3H 600 10 NPT B3-PI solder pins/pressfit pins GK20PI60B3H 600 20 NPT B3-PI solder pins/pressfit pins VCES=600V-B9 Part Numbe :SiC-MOSFET :SiC-SBD :SiC-MOSFET :SiC-SBD Internal circuit diagram Power loss comparison Power loss [W] Condition:Vcc=600V, Io=222Arms (assuming a 110kW inverter), fc=15kHz, P.F=0.8, IGBT module(Si) Full SiC module Approx. 70% reduction FWD_DC Tr_SW Tr_DC Power loss [W] Condition:Vcc=600V, Io=110Arms (assuming a 55kW inverter), fc=15kHz, P.F=0.8, SemiQ SiC MOSFET Modules enhance performance with the latest SiC chip sets and minimized package parasitics.

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Si MOSFET structure SiC Drain electrode SiC MOSFET structure Current flow n+ - Source Source Gate n p p SiC substrate Hybrid SiC power modules SiC Si Ic:500A/div Turn-on switching waveform Vce:250V/div t:1µs/div High-speed switching operations realized 10 Traction, industrial equipment, building facilities, electric vehicles, renewable

Antal utgångar: 1. Monteringstyp: Chassis Mount. Effektivitet: 90.5%. Ström - Utgång (Max):, 72A. Thyristors - SCRs -- F5308-ND, SCR 600V 10A TO220.